Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures

Test devices have been fabricated on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either Ga<sub>2</sub>O<sub>3</sub> or a stack of Ga<sub>2</sub>O<sub>3</sub> and Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub>. The wafers have two GaAs transport channels either side of an AlGaAs barrier containing a Si delta-doping layer. Temperature dependent capacitance-voltage (C-V) and current-voltage (I-V) studies have been performed at temperatures between 10 and 300 K. Bias cooling experiments reveal the presence of DX centers in both wafers. Both wafers show a forward bias gate leakage that is by a single activated channel at higher temperatures and by tunneling at lower temperatures. When Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> is included in a stack with 1 nm of Ga<sub>2</sub>O<sub>3</sub> at the interface, the gate leakage is greatly reduced due to the larger band gap of the Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> layer. The different band gaps of the two oxides result in a difference in the gate voltage at the onset of leakage of ~3 V. However, the inclusion of Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> in the gate insulator introduces many oxide states (≤4.70Ã�Â�10<sup>12</sup> cm<sup>âÂ�Â�2</sup>). Transmission electron microscope images of the interface region show that the growth of a Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> layer on Ga<sub>2</sub>O<sub>3</sub> disturbs the well ordered Ga<sub>2</sub>O<sub>3</sub>/GaAs interface. We therefore conclude that while including Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> in a dielectric stack with Ga<sub>2</sub>O<sub>3</sub> is necessary for use in device applications, the inclusion of Gd decreases the quality of the Ga<sub>2</sub>O<sub>3</sub>/GaAs interface and near interface region by introducing roughness and a large number of defect states

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications

No abstract available

Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model

A Two-Step Quantum Direct Communication Protocol Using Einstein-Podolsky-Rosen Pair Block

A protocol for quantum secure direct communication using blocks of EPR pairs is proposed. A set of ordered $N$ EPR pairs is used as a data block for sending secret message directly. The ordered $N$ EPR set is divided into two particle sequences, a checking sequence and a message-coding sequence. After transmitting the checking sequence, the two parties of communication check eavesdropping by measuring a fraction of particles randomly chosen, with random choice of two sets of measuring bases. After insuring the security of the quantum channel, the sender, Alice encodes the secret message directly on the message-coding sequence and send them to Bob. By combining the checking and message-coding sequences together, Bob is able to read out the encoded messages directly. The scheme is secure because an eavesdropper cannot get both sequences simultaneously. We also discuss issues in a noisy channel.Comment: 8 pages and 2 figures. To appear in Phys Rev

Frequency-dependent (ac) Conduction in Disordered Composites: a Percolative Study

In a recent paper [Phys. Rev. B{\bf57}, 3375 (1998)], we examined in detail the nonlinear (electrical) dc response of a random resistor cum tunneling bond network ($RRTN$, introduced by us elsewhere to explain nonlinear response of metal-insulator type mixtures). In this work which is a sequel to that paper, we consider the ac response of the $RRTN$-based correlated $RC$ ($CRC$) model. Numerical solutions of the Kirchoff's laws for the $CRC$ model give a power-law exponent (= 0.7 near $p = p_c$) of the modulus of the complex ac conductance at moderately low frequencies, in conformity with experiments on various types of disordered systems. But, at very low frequencies, it gives a simple quadratic or linear dependence on the frequency depending upon whether the system is percolating or not. We do also discuss the effective medium approximation ($EMA$) of our $CRC$ and the traditional random $RC$ network model, and discuss their comparative successes and shortcomings.Comment: Revised and reduced version with 17 LaTeX pages plus 8 JPEG figure

New evidence for strong nonthermal effects in Tycho's supernova remnant

For the case of Tycho's supernova remnant (SNR) we present the relation between the blast wave and contact discontinuity radii calculated within the nonlinear kinetic theory of cosmic ray (CR) acceleration in SNRs. It is demonstrated that these radii are confirmed by recently published Chandra measurements which show that the observed contact discontinuity radius is so close to the shock radius that it can only be explained by efficient CR acceleration which in turn makes the medium more compressible. Together with the recently determined new value $E_{sn}=1.2\times 10^{51}$ erg of the SN explosion energy this also confirms our previous conclusion that a TeV gamma-ray flux of $(2-5)\times 10^{-13}$ erg/(cm$^2$s) is to be expected from Tycho's SNR. Chandra measurements and the HEGRA upper limit of the TeV gamma-ray flux together limit the source distance $d$ to $3.3\leq d\leq 4$ kpc.Comment: 5 pages, 4 figures. Accepted for publication in Astrophysics and Space Science, Proc. of "The Multi-Messenger Approach to High-Energy Gamma-ray Sources (Third Workshop on the Nature of Unidentified High-Energy Sources)", Barcelona, July 4-7, 200

Discrimination, labour markets and the Labour Market Prospects of Older Workers: What Can a Legal Case Teach us?

As governments become increasingly concerned about the fiscal implications of the ageing population, labour market policies have sought to encourage mature workers to remain in the labour force. The ‘human capital’ discourses motivating these policies rest on the assumption that older workers armed with motivation and vocational skills will be able to return to fulfilling work. This paper uses the post-redundancy recruitment experiences of former Ansett Airlines flight attendants to develop a critique of these expectations. It suggests that policies to increase older workers’ labour market participation will not succeed while persistent socially constructed age- and gender- typing shape labour demand. The conclusion argues for policies sensitive to the institutional structures that shape employer preferences, the competitive rationality of discriminatory practices, and the irresolvable tension between workers’ human rights and employers’ property rights

System 1 Is Not Scope Insensitive

Companies can create value by differentiating their products and services along quantitative attributes. Existing research suggests that consumers’ tendency to rely on relatively effortless and affect-based processes reduces their sensitivity to the scope of quantitative attributes and that this explains why increments along quantitative attributes often have diminishing marginal value. The current article sheds new light on how “system 1” processes moderate the effect of quantitative product attributes on subjective value. Seven studies provide evidence that system 1 processes can produce diminishing marginal value, but also increasing marginal value, or any combination of the two, depending on the composition of the choice set. This is because system 1 processes facilitate ordinal comparisons (e.g., 256 GB is more than 128 GB, which is more than 64 GB) while system 2 processes, which are relatively more effortful and calculation based, facilitate cardinal comparisons (e.g., the difference between 256 and 128 GB is twice as large as between 128 and 64 GB)

Determination of the parameters of semiconducting CdF2:In with Schottky barriers from radio-frequency measurements

Physical properties of semiconducting CdF_2 crystals doped with In are determined from measurements of the radio-frequency response of a sample with Schottky barriers at frequencies 10 - 10^6 Hz. The dc conductivity, the activation energy of the amphoteric impurity, and the total concentration of the active In ions in CdF_2 are found through an equivalent-circuit analysis of the frequency dependencies of the sample complex impedance at temperatures from 20 K to 300 K. Kinetic coefficients determining the thermally induced transitions between the deep and the shallow states of the In impurity and the barrier height between these states are obtained from the time-dependent radio-frequency response after illumination of the material. The results on the low-frequency conductivity in CdF_2:In are compared with submillimeter (10^{11} - 10^{12} Hz) measurements and with room-temperature infrared measurements of undoped CdF_2. The low-frequency impedance measurements of semiconductor samples with Schottky barriers are shown to be a good tool for investigation of the physical properties of semiconductors.Comment: 9 pages, 7 figure